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ABSTRACT We perform non-radiative two-dimensional particle-in-cell simulations of magnetic reconnection for various strengths of the guide field (perpendicular to the reversing field), in magnetically dominated electron–positron plasmas. Magnetic reconnection under such conditions could operate in accretion disc coronae around black holes. There, it has been suggested that the transrelativistic bulk motions of reconnection plasmoids containing inverse-Compton-cooled electrons could Compton-upscatter soft photons to produce the observed non-thermal hard X-rays. Our simulations are performed for magnetizations 3 ≤ σ ≤ 40 (defined as the ratio of enthalpy density of the reversing field to plasma enthalpy density) and guide field strengths 0 ≤ Bg/B0 ≤ 1 (normalized to the reversing field strength B0). We find that the mean bulk energy of the reconnected plasma depends only weakly on the flow magnetization but strongly on the guide field strength – with Bg/B0 = 1 yielding a mean bulk energy twice smaller than Bg/B0 = 0. Similarly, the dispersion of bulk motions around the mean – a signature of stochasticity in the plasmoid chain’s motions – is weakly dependent on magnetization (for σ ≳ 10) but strongly dependent on the guide field strength – dropping by more than a factor of two from Bg/B0 = 0 to Bg/B0 = 1. In short, reconnection in strong guide fields (Bg/B0 ∼ 1) leads to slower and more ordered plasmoid bulk motions than its weak guide field (Bg/B0 ∼ 0) counterpart. 

Abstract—Recent advances in process technology have resulted in novel defect mechanisms making the test generation process very challenging. In addition to complete opens and shorts that can be represented via extreme defect resistance magnitudes, partial resistive opens and shorts are also of concern in deeply scaled CMOS technologies. For open defects with intermediate defect magnitude values, it has been shown that multi-pattern tests are necessary for defect exposure. We extend this approach to short defects with intermediate defect magnitude values to obtain a suite of multi-pattern tests for standard cell instances that cover complete as well as partial intra-cell open and short defects. A hierarchical scan-compatible SAT-based test generation approach for full scan sequential circuits is then proposed that allows such multi-pattern tests to be applied to the circuit via the scan infrastructure. A key innovation is the combined use of shift and capture operations along with launch-on-capture and launch-on- shift scan based test application for increased defect coverage. Resulting defect coverage improvements over conventional two-pattern tests are demonstrated on ISCAS89 benchmark circuits.